| 摘要 |
<p>A method for the growth of a semi-conductor material on a substrate by vapour phase epitaxy, comprises establishing a gas flow in each of a plurality of ducts, and moving the substrate, in a single plane of movement, from one duct to another. Suitable apparatus for use in the method comprises a plurality of ducts (10, 11, 12, 13); means for establishing a gas flow along each duct; a substrate support member (4), on which there may be a groove (6) for the location of a substrate; and means for moving, e.g. rotating, the support member (4). In use, the substrate is exposed sequentially to at least two of the gas flows, e.g. to grow GalnAs on InP.</p> |
