发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To shorten an access time by accessing simultaneously plural memory cells at peripheral address having a prescribed relation with the address specified by an access command as a center. CONSTITUTION:A memory device is constituted of 1st-4th memory blocks 1-4, data bus selection circuit 6 and data bus 7. Receiving row address signals b6y a random access action, respective blocks 1-4 act in parallel, and the side of the data bus selection circuit 6 decides any one of them to be accessed. When the block 1-4 input and output data to the memory cell of a selective word line in parallel, memory cells at adjacent row addresses are accessed in paralllel.</p>
申请公布号 JPS6158058(A) 申请公布日期 1986.03.25
申请号 JP19840178269 申请日期 1984.08.29
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO
分类号 G09G5/36;G06F12/00;G06T1/60;G09G1/02;G11C7/00;G11C11/401 主分类号 G09G5/36
代理机构 代理人
主权项
地址