| 摘要 |
PURPOSE:To enable to form a pattern of high degree of resolution even when there is a stepping on a substrate by a method wherein the reaction substance of an organic silane surface treatment agent and cyclopentane is contained in the upper layer resist film when a double layer resist pattern method is performed. CONSTITUTION:The first flattened resist film 2 is formed on an element substrate. Then, an organic silane surface treatment agent layer 3 is formed on the film 2. Subsequently, a photoresist wherein cyclopentane is used is coated on the layer 3 as a solvent, and the second resist layer 4 containing organic silicon is formed by reacting an organic silane surface treatment agent and cyclopentane. Then, an etching is performed on the film 2 using the film 4 formed in the prescribed pattern as a mask, and the film 2 is formed into the prescribed pattern. According to this method, the oxygen plasma resisting property of the film 4 is improved, and when an oxygen reactive ion etching is performed, the film 2 is vertically etched, and a pattern of uniform size can be formed even when there is a stepping on the substrate 1. |
