| 摘要 |
PURPOSE:To contrive stabilization of a resist film or a resist pattern by a method wherein the material of low molecular weight having a crosslinking radical or one containing a high molecular weight radical catching agent is used as an additive. CONSTITUTION:A wafer, wherein an Al alloy film having a positive type photoresist pattern is provided, is fixed on the substrate which is maintained at the prescribed temperature, and far ultraviolet rays are made to irradiate on the whole surface. A crosslinking reaction is generated on the surface layer of the resist pattern by the above-mentioned treatment. Then, after the wafer is washed, it is retained on the supporting stand which is maintained at the prescribed temperature, and ultraviolet rays and far ultraviolet rays are made to irradiate on the whole surface by running an alternate current on the coil provided close to the reverse side of the wafer while it is being worked as an electromagnet. Subsequently, an anisotropic dry etching treatment is performed on the Al alloy film located on the wafer surface using the resist pattern as a mask. According to this method, as an additive infiltrates into a porous film region and fixed in a coupled manner, the deformation and the resisting property for dry etching of the wafer can be improved. |
