| 摘要 |
PURPOSE:To realize the miniaturization of elements and to effect the isolation of elements of high reproductivity by an easy process by using the photoresist film capable of reliquefaction as one left in the recesses after forming an insulating film on a semiconductor substrate. CONSTITUTION:Grooves are formed in a field region of a semiconductor substrate 1 and B<+> ions are implanted to form a P layer 8. Nextly, a field insulating film 10 is deposited on the substrate 1 and a resist film 9 is formed in a part of the field region. Then the film 9 is fused again and is solidified and the films 10 and 9 are etched uniformly. Consequently, even if the elements are miniaturized, the field insulating film is levelled with good controllability and the good element isolation characteristics can be obtained. Also, the demand for the accuracy in mask alignment during a photolithography process is alleviated and the facile mask alignment of low cost becomes possible. |
