| 摘要 |
<p>PURPOSE:To easily detect line disconnections if any by a method wherein all the signal input terminals on one side of the source and gate electrode lines are short-circuited to each other, and short circuit is created between source and gate electrode lines, for the formation of common electrodes in a part of the short-circuited pattern. CONSTITUTION:A first polycrystalline silicon film is formed on an insulating substrate and a gate oxide film is formed thereon. The first polycrystalline silicon film constitutes electrode lines 102, and the signal input terminals 105 on one side (the left side) of the lines 102 are short-circuited to each other to be developed into a common, wide electrode 107. Further, all the ends on one side (the lower side) of source electrode lines are also short-circuited to each other. For the detection of disconnection, one of the tester electrodes is connected to the common electrode 107 and the other electrode (probe) is caused to touch the source or gate input signal terminals, free of short-circuiting, of the gate electrodes one after the other, for the determination of resistance presented by each of the signal lines.</p> |
