发明名称 PLASMA PROCESSING METHOD
摘要 PURPOSE:To shorten the time from gas introduction to starting discharge by a method wherein any gas to be processed is introduced into a vessel wherein inside gas pressure is reduced down to specified value to start discharge at the pressure not exceeding the pressure for processing and after the discharge, the pressure is adjusted to specific value. CONSTITUTION:Any gas to be processed is introduced when the pressure inside a vessel is reduced down to P0 and then discharge is started at the pressure P2 lower than specified processing pressure P1. The pressure is boosted by the discharge to be adjusted at P1+ or -DELTAP1 by a variable conductance valve interlocked with a pressure gauge during the time of plasma processing. The pressure boost as well as the pressure P2 depend upon the conditions such as kind, flow rate of gas and discharge power etc. DELTAP1 and DELTAP2 are respectively specified to be around several % of P1 and around 10-20% of P2. Through these procedures, the time taken from starting introduction of the gas to be processed to starting discharge may be shortened to improve the throughput.
申请公布号 JPS6154627(A) 申请公布日期 1986.03.18
申请号 JP19840176680 申请日期 1984.08.27
申请人 HITACHI LTD;HITACHI TECHNO ENG CO LTD 发明人 IKUHARA SHIYOUJI;TADA KEIJI;KAJI TETSUNORI
分类号 H01L21/205;H01J37/32;H01L21/302 主分类号 H01L21/205
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