| 摘要 |
<p>PURPOSE:To prevent breakdown due to self-heat generation by interposing a device, in which a diode having polarity opposite to a diode, reverse leakage currents therefrom are increased at a high temperature, is connected in series with the diode, in parallel with a photodiode. CONSTITUTION:A diode 6, reverse leakage currents therefrom are increased at a high temperature, is connected in parallel with a photodiode 2 between a drain and a gete in a MOSFET4, and a diode 7 having polarity opposite to the polarity of the diode 6 is inserted in series with the diode 6. When the FET4 is changed into a semiconductive region and a relay is self-heat generated, leakage currents flowing through the diode 6 increase owing to the heat generation in the diode 6 at that time, and the potential drop of a resistor 5 augments, thus elevating the gate potential of the FET4, then completely turning the FET4 ON. The diode 7 prevents the flowing of currents through the diode 6 from the diode 2.</p> |
