| 摘要 |
The invention is related to a semiconductor transistor device comprising :
- a channel area (1), said channel area comprising a channel layer in which charge carriers can move when the transistor is turned on, in order to pass a current through the transistor,
- a source area (4) and a drain area (5), contacting the channel layer for providing current to and from said channel layer,
- a gate electrode (3), preferably provided with a gate dielectric (2) between the gate electrode and the channel layer,
wherein said channel layer consists of a III-V material, and said source and drain areas comprise SiGe, being Si x Ge 1-x , with x between 0 and 100%, arranged so that heterojunctions (30,31) are present between III-V material and SiGe, wherein said heterojunctions (30,31) are oriented so as to intersect with said gate dielectric (2) or said gate electrode. |
