| 摘要 |
PURPOSE:To perform simply a dry etching by a method wherein a reactive substance is made to adhere on a material to be etched, an energy beam is irradiated on the material to make to promote a reaction and the substance of an unreacted component is removed from the material. CONSTITUTION:When the interior of a chamber 11 is exhausted to a vacuum, liquid nitrogen is injected in the tank 16 of a holder 15 and reaction gas is introduced 13 in the chamber 11, the gas is attracted on the surface of a material 17 on the holder 15 and a thin layer 21 is formed. After a constant amount of the reactive gas layer is formed, a feed of the gas is stopped. When an electron beam (e) is radiated from an electron gun 18 and the prescribed parts of the material 17 are irradiated, the gas being attracted at the irradiation regions is activated by the engergy of the beam and the irradiation regions react with the material 17. Generated gas is exhausted from a tube 12. After an etching is performed on the material in the prescribed depth, infrared rays are projected on the material 17 from a lamp 22 to remove the gas layer 21 attracted and the etching is completed. Incidentally, charged particles rays, such as an ion beam, or radioactive rays, such as a laser beam and X-rays, can be used instead of the electron beam and the reactive substance, which is made to adhere on the material 17, can be a thin film including reaction species. |
