PHOTORESIST MATERIAL

摘要

The photoresist material comprises a polymer having chloromethyl groups introduced therein and containing 2-isopropenyl-naphthalene as one component, an average substitution degree of the chloromethyl groups based on the polymer is within a range of 0.2 to 5. The photoresist material has a high glass transition point, a high sensitivity to radiation and an excellent dry etching resistance, whereby it is suitably used for the manufacture of a semiconductor element using radiation and provides a good resolution on etching.