| 摘要 |
PURPOSE:To prevent the stochiometric ratio of GaAs from fluctuating by a method wherein, in order to form a P type GaAs layer on a compound semiconductor substrate, acceptor type impurity ion is firstly implanted by ion implanting process before heat-treatment, an Si3N4 film with refractive index of film in the range of 1.9-2.2 is formed as a protective film by plasma CVD process with film forming temperature not exceeding 300 deg.C. CONSTITUTION:In order to form a P type GaAs layer on a compound semiconductor substrate, acceptor type impurity ion such as Be, Mg, Zn, Cd etc. is firstly implanted by ion implanting process. Later before the heat-treatment to activate the implanted ion, an Si3N4 film with refractive index of film in the range of 1.9-2.2 is formed as a protective film on the overall surface of substrate by plasma CVD process with film forming temperature not exceeding 300 deg.C. Through these procedures, the stoichiometric ratio of formed P type GaAs layer may be stabilized to form specified P type GaAs layer. |
