发明名称 DRY ETCHING OF PLASTIC
摘要 PURPOSE:To carry out the etching of a plastic substrate economically, in high accuracy, by applying a mask of an organic substance, etc. to a plastic substrate, irradiating the substrate with ultraviolet radiation in oxygen atmosphere, and dissociating the plastic of the unmasked part by the chemical reaction with ozone generated by the UV radiation. CONSTITUTION:The whole surface of an acrylic substrate 1 is covered with a thick photo-resist layer 2, and an opening having a desired patten is formed to the layer 2. The assembly is placed in an oxygen atmosphere having normal or reduced pressure, irradiated with ultraviolet radiation to generate ozone, and the acrylic resin of the unmasked part is dissociated and etched by the chemical reaction of the generated ozone and the carbon of the exposed acrylic substrate to form a hollow part 4. After etching, the photo-resist layer is removed to obtain the etched acrylic substrate. Metals or ceramics, etc. may be used as the mask.
申请公布号 JPS6153335(A) 申请公布日期 1986.03.17
申请号 JP19840173111 申请日期 1984.08.22
申请人 TOHOKU RICHO KK 发明人 KUDO TAKAYOSHI
分类号 C08J7/00;C08J7/12;G03C5/00;G03F7/00;G03F7/26 主分类号 C08J7/00
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