| 摘要 |
PURPOSE:To enable hermetic sealing by eliminating the effect of the variability in cap installation on microwave characteristics by a method wherein the transmission line surface of a microwave IC substrate is provided with the metallized pat, and a cap composed of metal or ceramic having a metallized surface is installed thereabove. CONSTITUTION:A gate electrode transmission line 5a and a drain electrode transmission line 6a both constitute the input-output matching circuit of an amplifier as microwave strip lines. The gate electrode 5b constitutes part of the microwave strip lines for connecting a gate bonding wire 9 formed on the side of a ground conductor 2, and the gate electrode 6b forms part of th microwave strip lines for conecting a drain bonding wire 10. Through holes 5a and 6c connect transmission lines 5a and 6b with the electrode 5b and 6c. The hermetic sealing metallized layer 17 made up by the same method as that for the ground conductor 2 surrounding the recess around a FET7 is connected to the cap 18 composed of ceramic having a metallized surface with solders 19. |
