发明名称 HYBRID INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To provide a lifetime of the period equivalent to the conventional one or longer even if power is increased by connecting between a power chip and a copper piece, between the piece and an insulating substrate and between the substrate and a heat sink with Sn-Sb. CONSTITUTION:Between a power chip 21 and a copper piece 22, between the piece 22 and an insulating substrate (Al2O)23, and between the substrate 23 and a heat sink (Al)24 are connected by Sn-Sb solders (Sb=8-10wt%) 31, 32, 33. The distortion due to the differences of thermal expansion coefficients of the power chip (Si), the copper piece, te substrate and the heat sink are applied to the solder, but in case of Sn-Sb solder, the elongation is large. Accordingly, the fatigue to the repetitive distortion of the solder is alleviated to increase the lifetime of the power chip due to thermal fatigue.
申请公布号 JPS6151837(A) 申请公布日期 1986.03.14
申请号 JP19840173621 申请日期 1984.08.21
申请人 NEC CORP 发明人 HIROE TOSHIO
分类号 H01L21/52;H01L21/58;H01L23/373;H01L23/492 主分类号 H01L21/52
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