| 摘要 |
PURPOSE:To improve both the accuracy of the pattern of an impurity ion implantation layer and the accuracy of the amount of impurity ion implantation by installing in the same vacuum chamber an irradiator used to irradiate far ultraviolet rays upon the resist film of the wafer, an impurity ion implantation device and a transfer mechanism. CONSTITUTION:A wafer 50 is extracted through an auxiliary exhaust chamber 7 and placed on a transfer base plate 2 before being stopped by the end of a wafer stopper 4a. Then, the light of a far ultraviolet ray lamp 5 is irradiated upon a mask resist film on the main surface of the wafer 50 to degas and harden the resist film. Next, when the end of the wafer stopper 4a is buried in the transfer base plate 2, the wafer 50 glides over the surface of the transfer base plate 2 before being stopped by the end of a waver stopper 4b. Next, an impurity ion implantation layer is formed by irradiating an impurity ion beam from the X direction while using the resist film as a mask. After that, when the end of the wafer stopper 4b is buried in the transfer base plate 2, the wafer 50 is removed outside the device through an auxiliary exhaust chamber 8. |
