| 摘要 |
PURPOSE:To prevent the deterioration in element hold time due to the stress during assembly by a method whrein active elements are not arranged in the neighborhood of corners of scribe lines. CONSTITUTION:The active element is arranged at a distance of about 200mum or more from the corner of the scribe line in order to prevent the deterioration in characteristics of the active element due to the stress in a chip. For example, a 256K D-RAM is produced on a P type Si substrate by a normal MOS process and then used as the sample, and the hold time for the active element is measured before and after this sample is fixed to the case. The result shows correlation between the intrachip position of the active element and the hole time with respect to the sample after fixing to the case: the holding time becomes shorter with smaller distances by the use of the element located within about 200mum from the corner of the scribe line. |
