| 摘要 |
PURPOSE:To obtain the semiconductor light emitting device of low heat resistance without generating a distortion in an active layer during a die bonding process by forming a recess on one of main surfaces of a submount and die bonding the light emitting element so as to bring a projection of a surface of the element in accordance with said recess. CONSTITUTION:On one of main surfaces of a silicon wafer 13, grooves with 20mum of width and 2mum of depth, for example, are formed in stripe form by photolithography process and etching process. After heat, Sn11 is deposited to about 2mum thick by vapor deposition. The The Sn11 forms an eutectic alloy together with Au on the element side during the later die bonding process and functions for connecting the element with a submount. die bonding is effected so as to bring the groove of the submount thus obtained in accordance with the projection part of a mesa on a surface of the laser element. If die bonding is made while applying a pressure to the element under such conditions, the pressure does not concentrate in the masa part, but is applied to the whole element so that a distortion is not generated in the active region. |
