| 摘要 |
PURPOSE:To reduce the defect density of semiconductor layer by a method wherein a laser beam or the high-powered energy (L-annealing) same as the laser beam is made to irradiate on a semiconductor, and the appendix of bivalence and trivalence or pentavalence and hexavalence having P type or N type of solubility limit or more are doped on the surface of a semiconductor or in its vicinity. CONSTITUTION:Neutralized gas is introduced from 15 into a chamber 23, inert gas such as helium and the like is introduced from 16 and halogen element such as HCl and the like is introduced from 17 for the purpose of maintaining a chamber 23 in the decompressed condition of 0.01-100Torr, especially at 0.1-10Torr. Also, the evacuation of the chamber 23 is performed using a needle valve 18 and a vacuum pump 19. An L-annealing is performed by scanning a laser beam, sent from a laser 12 through a mirror 13, on a substrate. A high frequency induction furnace 22, a furnace 25 with which a low temperature annealing is performed, and a special high frequency induction furnace 24 are provided. Electric discharge is generated in the chamber, the hydrogen and the like in a chemically active condition in a mascent state is doped in the semiconductor, and the above is coupled with an unpaired hand, thereby enabling to reduce the density in the center of recoupling of the semiconductor. |
