| 摘要 |
PURPOSE:To enable the stable crystal growth for a long period, by protruding a pair of structures upward from the molten silicon in a crucible at the outside of both lengthwise ends of the growing band crystal of silicon, and attaching a heating means to heat the structures. CONSTITUTION:A pair of structures 52a, b are protruded upward from the molten silicon in the crucible 51. The structures are positioned opposite to the ends of the growing ribbon crystal 56 of silicon at the outside of both lengthwise ends. The heater for heating the structures 52a, b is attached to the outer side 54a, b of the structures separately from the heater for the crucible 51 attached to the bottom 53 of the crucible 51. The lengthwise solid-liquid interface of the ribbon crystal is set upwards in concave form and the top of the solid-liquid interface is set almost parallel to the pulling direction of the crystal in the crystal growth process. |
