发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To manufacture a satisfactory thin film on a substrate in the stage of forming the thin film by flow discharge on the substrate in a vacuum reaction vessel by coating preliminarily an org. high-polymer film on the inside wall of the reaction vessel and a counter electrode. CONSTITUTION:The cylindrical substrate 1 is placed in the vacuum reaction vessel 5 and is heated to a prescribed temp. by a heater 3. After the inside of the vessel 5 is evacuated through a discharge port 7, a gaseous raw material contg. silicon is introduced through the gaseous raw material introducing port 6 and is maintained under the prescribed pressure. Voltage is then impressed between the counter electrode 2 and the substrate 1 from a power source 4 to execute glow discharge. The electrode 2 and/or the inside wall of the vessel 5 is preliminarily coated with the org. high polymer so that the amorphous silicon film sticking thereto is made hardly strippable. A polyimide triazine heat resistant resin or the like is used for the org. high polymer and the thickness of the coating is made about several mu - several hundreds mu. The stripping of the amorphous silicon film from the electrode 2 and the vessel wall and the sticking thereof to the substrate 1 are thus prevented.
申请公布号 JPS6148569(A) 申请公布日期 1986.03.10
申请号 JP19840167335 申请日期 1984.08.10
申请人 MITSUBISHI CHEM IND LTD 发明人 YOSHITOMI TOSHIHIKO;HORIUCHI HIROSHI;SATO YOSHIHARU
分类号 C23C16/44;C23C16/50;C23C16/503;C23C16/54;(IPC1-7):C23C16/50 主分类号 C23C16/44
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