| 摘要 |
PURPOSE:To obtain a semiconductor laser, which projects laser beams having a single wavelength and coupling structure thereof with an optical fiber can be simplified, by forming the projection end section of beams on at least one side of an active layer or an optical guide layer in thickness thicker than the inside of the layer. CONSTITUTION:An active layer 3a is grown on an optical guide layer 8a in the same epitaxial manner as an active layer 3, and an upper surface thereof is flattened approximately and the thickness of projection end sections 10 thereof are made thicker than the inside thereof. Consequently, only a thin section in the active layer 3a functions as a light-emitting region, and emits laser beams having plane waves, but the beams are changed into curved surface waves because the thickness of the active layer 3a and the optical guide layers 8a is increased when the beams reach the projection end sections 10, thus hardly interfering in the action of corrugation 9 even when the beams are reflected by the projection end surfaces, then projecting as single wavelenths. The projection end sections 10 in the active layer 3a do not function as the light-emitting region, thus resulting in no damage of a predetermined luminescent function even through a mechanical contact, then allowing the butt-joining of an optical fiber. |
