| 摘要 |
PURPOSE:To stabilize the temperature in a chamber at a low level and enable a semiconductor wafer to be efficiently processed, by providing a cooling wafer pipe in the chamber. CONSTITUTION:A metallic cooling wafer pipe 3 is provided on the inner periphery of an each tunnel 2 inside a chamber 1 of the coaxial electrode structure. A thermocouple 4 is similarly attached to the inner wall of the etch tunnel 2. A temperature controller 5 and an electromagnetic valve 6 are provided which are adapted to adjust the flow rate of cooling water flowing through the pipe 3 in response to the output of the thermocouple 4. Thus, it is possible to prevent a rise in the chamber temperature during a plasma processing period. |
