| 摘要 |
A semiconductor device has a sprayed metal layer (44) formed by a method such as plasma spraying on a metal substrate (41) of a material such as aluminium, and a semiconductor element (50) attached to the sprayed metal layer (44) by soldering. A sprayed insulating layer (42) may be interposed between the sprayed metal layer (43) and the metal substrate (41) for electrically insulating the element (49) from the substrate (41). |
