发明名称 |
Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes. |
摘要 |
<p>© A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.</p> |
申请公布号 |
EP0173611(A2) |
申请公布日期 |
1986.03.05 |
申请号 |
EP19850401539 |
申请日期 |
1985.07.26 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KOH, YUN BAI;CHIEN, FRANK;VORA, MADHU |
分类号 |
H01L27/04;H01L21/02;H01L21/225;H01L21/28;H01L21/285;H01L21/331;H01L21/822;H01L29/04;H01L29/73;H01L29/732 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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