| 摘要 |
PURPOSE:To prevent the dependence of the size of memory cells upon a wiring pitch by forming the adjacent wirings in different layers with interposing an interlayer insulating film. CONSTITUTION:A field insulating film 2 consisting of a thick Si dioxide film is formed on a surface of a semiconductor substrate 1 consisting of an Si substrate. Each memory cell is composed of MOS elements and comprises a gate insulating film 3 consisting of thin Si dioxide, a semiconductor region 4 of opposite conductive type to that of the substrate 1 formed under the film 3, and Ward wires W1-W4 consisting of polysilicon which also function as gate electrodes. Then an odd number wire D1 of the parallel data wires D1 and D2 is composed of an Al wiring 7 whereas the even number wiring D2 is composed of an Al wiring 8. Between these wirings 7 and 8, the interlayer insulating film 10 exists, which is similar to the film 9 functioning for interlayer insulation between the Ward wire and data wire. Consequently, the possibility of shortage between the adjacent wirings can be eliminated. |
