| 摘要 |
PURPOSE:To execute the etching of semiconductor sample through the ion generated in the plasma chamber and neutral radical by providing an electrical and a mechanical means through rejection of ion to enter the surface of semiconductor sample. CONSTITUTION:A plasma chamber 1 and an etching chamber 2 for sample are provided adjacently, the wall surface forming boundary between both chambers is provided with an perture which connects both chambers and an electrode 7 is provided to this aperture. This electrode 7 is composed of two electrode plates 7a, 7b arranged in parallel keeping the specified interval. Respective electrode plates are provided with many holes, the electrode 7b is set to the earth potential and when a bias voltage is applied to the electrode 7a, ion is accelerated and rushes into the etching chamber 2. At the center of etching chamber 2, a sample pedestal 6 is provided and a semiconductor sample 3 to be processed is placed thereon. At the side of pedestal 6, an ion current monitor 8 is installed. |
