| 摘要 |
PURPOSE:To eliminate kink phenomenon etc. owing to substrate floating effect, by forming a semiconductor pattern through an oxidation film on a conductive pattern lying on an insulating layer, and by forming source and drain regions on the semiconductor pattern. CONSTITUTION:On an Si substrate 11, an SiO2 film 12 and an Si film 13 are formed. Using a resist pattern 14 formed as a mask, Si films 131, 132 are formed, on which an SiO2 film 15 is grown. Over the entire face, a polycrystalline Si film 16 is deposited and patterned to form electrodes 19, 18. Into the film 132, As is then implanted to form source and drain regions 21, 22. Next, an SiO2 film 24 is deposited and an aperture 25 is bored above the film 131. Next, after a single crystal Si film 26 is formed, it is patterned to form an Si film pattern 27 positioned on the film 131. Thereafter, a MOSFET is formed on the pattern 27. In this structure, since a channel of the MOSFET does not become a floating state, harmful phenomenon owing to the floating effect can be prevented. |
