GaAs/GaAlAs Heterojunction bipolar integrated circuit devices

摘要

Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This integrated circuit device is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The use of an ion implant technique avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with ion implantation, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.