发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To form a thin film having uniform thickness and quality by controlling the flow rate of a sputter-gas from plural blowoff ports which are arranged in the vicinity of a target electrode in accordance with the changes in the brightness of the sputter-gas. CONSTITUTION:Plural blowoff ports 2-11 are arranged in the vicinity of a target 1 of oxide porcelain, etc. in a sputtering device, and a rare gas such as argon is filled in a chamber (not shown in the figure). When a sputter-gas such as oxygen is supplied from said blowoff ports 2-11 to carry out magnetron sputtering, the intensity of specific emission lines from plasma emission is detected in the vicinity of the target surface as the function of positions by a plasma emission detector 12. The amt. of gas blown from each blowoff port 2, etc. corresponding to the position is independently controlled in accordance with the changes in the intensity of the emission line. Consequently, sputtering is carried out by utilizing effectively and uniformly the target surface.
申请公布号 JPS6137964(A) 申请公布日期 1986.02.22
申请号 JP19840159602 申请日期 1984.07.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUWATA JUN;FUJITA YOSUKE;TODA TAKAO;ABE ATSUSHI;MATSUOKA TOMIZO;NITTA KOJI
分类号 C23C14/00;C23C14/54;(IPC1-7):C23C14/54 主分类号 C23C14/00
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