| 摘要 |
For the purpose of adjustment to the desired profile of the p-n junction (3, 4), an implantation mask (2) is used whose thickness varies in the peripheral region (2b) as required by the path of the desired p-n junction (3, 4) in the silicon crystal (1). The mask is produced electrochemically on the silicon crystal (1) using the silicon-electrolyte contact, the current flow being light-induced. The method makes possible a continuous lateral variation of the implanted dose over fairly large ranges (a few 100 mu m) and is used in producing power semiconductor devices, in particular thyristors. <IMAGE> |
