| 摘要 |
PURPOSE:To prevent the enlargement of damage caused by a large current by dividing a channel region of a semiconductor layer at least into two parts with which source and drain electrodes are connected. CONSTITUTION:In a thin-film transistor, a channel region 19 of a semiconductor layer is divided into plural parts and these are connected to a drain electrode 20 and a source electrode 21. By such constitution, if a large current flows in the channel region 19 as an insulation damage occurs for the thin-film elements during operation, for example, even if a discharge occurs at the part 22, the damage does not reach the adjacent semiconductor layer because the semiconductor layer is divided. Accordingly, there is no possibility that a damage reaches the whole semiconductor, and the reliability can be exceedingly improved. |
