OPTICAL CHEMICAL VAPOR ETCHING METHOD

摘要

PURPOSE:To form etching patterns at a low temperature on the substrates of a variety of material by utilizing orbital radiation beam as the light source. CONSTITUTION:The light source A is mainly composed of electron synchrotron or electron accumulation ring, generates the orbital radiation light beam and guides it to the light selection part B. At the light selection part B, the required lights of single or plural wavelength ranges are extracted from the orbital radiation beam guided from the light source A and are then sent to a processing part C. The time and timing of light to be sent to the processing part C are controlled as required. The processing part C is mainly composed of a processing chamber for making etching to the substrate. This chamber is provided with an adjusting mechanism for the gas which is used as the etching agent and a guiding mechanism which guides the gas to the processing chamber. The optical system irradiates the substrate with the lights of plural wavelength ranges simultaneously or in the desired timing while controlling the direction and region of lights.