Semiconductor memory device having a redundancy circuit.

摘要

A semiconductor memory device including a random-access memory (RAM) having at least one redundancy column for replacing a defective column, a serial output circuit (SR,...SRn) for reading out in parallel and outputting serially data stored in the random access memory, and a redundancy circuit (RA, 4,5,6,7,DC1,RSA) for replacing data of the defective column with data of the redundancy column.