| 摘要 |
PURPOSE:To form a semiconductor thin film suitable for window material from silicon raw material only by a method wherein a glow discharge decomposition method is performed using disilane gas. CONSTITUTION:A P type semiconductor thin film is formed on a substrate by performing a glow discharge decomposition method using disilane and P type doping gas as raw materials and by applying grow discharge energy or 40kj or below per disilane unit mass. The diborane diluted by hydrogen or helium is used as doping gas. The ratio of quantity of doping gas for disilane is 10 times or less, or desirably three times or less. As the obtained P type semiconductor thin film has a wide optical forbidden band width, it is suitable for the window material for amorphous silicon photoelectric conversion element including a-Si solar batteries, a back contact material, and the material for element to be arranged on the side where a light is made to incident of a tandem connection element. |
