| 摘要 |
PURPOSE:To prevent the electrostatic breakdown of a photodiode and a blocking diode by previously short-circuiting both ends of the diode and conducting a pattern layout through which reverse withstanding voltage is not applied to the diode even when static electricity is applied. CONSTITUTION:A metallic film 2 such as chromium as a first layer is formed onto a glass substrate 1. A short-circuiting bar S section is shaped simultaneously according to a pattern for the metallic film 2. Amorphous silicon (a.Si) 3 is formed. An insulating layer in a matrix wiring section and an insulating layer 4 such as SiO2 as a protective film for a.Si are shaped, and a through-hole section 41 connected to a second layer metal in a circuit shape is formed. An upper transparent conductive film 5 for a photoelectric conversion element 31 is formed, and a second metallic film 6 is shaped. The metallic film 6 is of chromium, Nichrome or gold or the like at that time, and functions as an upper electrode for an a.Si blocking diode 32 in combination. When the metallic film 6 is patterned, the metallic film 2 can be removed at the same time as the processing of the metallic film 6 and a circuit is made independent when the short-circuiting bar S section is removed previously. |
