| 摘要 |
PURPOSE:To enable the simplification and stabilization of the process and the miniaturization of products by a method wherein a package to be incorporated is allowed to directly epitaxially grow by using only vapor phase growth without the use of a compound semiconductor substrate, and processing is carried out as it is into an arbitrary shape. CONSTITUTION:Compound semiconductor is epitaxially grown on a cutting board 1, and an N type thin film 3 and a P type thin film 4 are successively formed with an arbitrary composition and an arbitrary thickness. The substrate 1 is previously embedded with an optical fiber 5, an N-electrode 6, and a P-electrode 7. After vapor phase growth, protected with a coat of an SixNy or SiO2 protection film 8 and positioned to the optical fiber 5 under the substrate 1, the light emitting part is fitted to the axis of the fiber 5. Thereafter, the electrode is formed by removing the junction except in the light emitting part by normal process. Finally, the N type thin plate 3 and N-electrode 6; P type thin film 4 and P-electrode 7 are joined to each other, respectively, thus assembling them; accordingly, a series of processes are finished. |
