| 摘要 |
PURPOSE:To obtain a p type a-Si:H film having Eopt exceeding 1.9eV without introducing an element, such as carbon, nitrogen, oxygen or the like by using disilane and a p type doping gas as raw materials, applying a specific quantity of glow discharge energy and forming a p type silicon film. CONSTITUTION:Disilane and a p type doping gas are employed as raw materials, glow discharge energy of 40kJ/g-Si2H6 or less per disilane unit mass is applied, and a thin-film consisting of p type amorphous silicon is shaped onto a substrate with an electrode through glow discharge. Accordingly, hydrocarbon as a raw material for forming a substance such as a-SiCx need not be used, thus eliminating the trouble of the removal of carbon into a glow discharge chamber. Since hydrocarbon can be removed from raw material gases, the complicatedness of the control of raw materials is eliminated while the composition ratio of Si to C need not be controlled in order to control Eopt and conductivity, thus forming a window material only by employing disilane as the raw material. |
