| 摘要 |
Semiconductor body is prepared and a film is formed on the semiconductor body, followed by forming an interconnection layer of aluminum alloy on the insulating film. A silicon oxide film is formed on the interconnection layer, followed by removing that portion of the silicon oxide film which is situated on a predetermined trimming area of the interconnection layer. A silicon nitride film is formed on the whole surface of the resultant structure. An energy beam is directed onto the predetermined trimming area of the interconnection layer, causing the interconnection layer to be locally heated to 400 DEG to 600 DEG C. whereby atoms in the interconnection layer migrate to permit the interconnection layer to be trimmed.
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