发明名称 VAPOR GROWTH METHOD
摘要 PURPOSE:To obtain a deposited substance in the desired shape on a substrate with high accuracy by synchronized irradiation of laser lights where the laser light pulse for raw material gas reaction is irradiated horizontally for substrate while the laser light pulse for heating substrate is irradiated vertically. CONSTITUTION:A substrate 8 within a reaction chamber 9 is irradiated through a mirror 5 with light beam control with light beam operation system 3 controlled by a microcomputer 13 using a ruby laser light pulse as the light source 1 for heating substrate. As the light source 2 for reaction, an excimer laser light pulse is used, it is then squeezed with a cylindrical lens 4 and it enters horizontally the substrate 8. A timing pulse is sent to each laser from a comon clock 11 through a variable delay circuit 12, the lasers are synchronized and oscillation period of reaction laser is a little delayed from the heating laser. According to this structure, it is unnecessary to irradiate the substrate with short wavelength, high energy light beam in high intensity and any thermal damage is not generated on the substrate. Moreover, since the substrate is heated in synchronization with the reaction laser light, temperature distribution of substrate is not destroyed during reaction of raw material gas (during irradiation of reaction laser pulse) and a high accuracy pattern can be deposited.
申请公布号 JPS6130028(A) 申请公布日期 1986.02.12
申请号 JP19840150655 申请日期 1984.07.20
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 JINGUUJI KANAME;TATE AKIYUKI;YAMADA TAKESHI;TAKATO NORIO
分类号 C30B25/02;C23C16/48;H01L21/205;H01L21/31 主分类号 C30B25/02
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