发明名称 Crystal pulling apparatus for making single crystals of compound semiconductors containing a volatile component
摘要 In a high pressure vessel such as an electric furnace using an inert gas of an extremely high pressure as an atmosphere for preventing the evaporation of arsenic or phosphorus when pulling a single crystal of a compound semiconductor having a high melting point and exhibiting a high dissociation pressure at the melting point, such as a III-V Group compound semiconductor, e.g. GaAs or GaP from a feed melt contained in a crucible, it is intended to rotate and vertically move a crucible supporting shaft and a single crystal pulling shaft smoothly without impairing at all the gas-tightness in the furnace, the drive means utilizing a magnetic force for performing such rotational and vertical movements. In order to mount rotating and vertically moving mechanisms of the moving shafts in an extremely limited space of the vessel to permit easy assembly and disassembly, there are provided plural cylinders enclosing these mechanisms, each consisting of axially removably connected tubular bodies of a thin-walled small diameter. The above rotating and vertically moving mechanisms are incorporated in the interior of those cylinders. Additionally, a weight measuring means is provided. All parts are in a hermetically sealed state.
申请公布号 US4569828(A) 申请公布日期 1986.02.11
申请号 US19840675404 申请日期 1984.11.27
申请人 GAKEI ELECTRIC WORKS CO., LTD. 发明人 NISHIZAWA, MINORU
分类号 C30B15/30 主分类号 C30B15/30
代理机构 代理人
主权项
地址