发明名称 MAGNETORESISTANCE ELEMENT
摘要 PURPOSE:To shorten the manufacturing process while improving the reliability and to lower the cost, by forming a first conduction film on a substrate only of a material having magnetoresistance effect except for the portion of a junction terminal with the outside. CONSTITUTION:A first conduction layer, unlike conventional two-layer wired magnetoresistance element, is composed only of a permalloy film 2 having magnetoresistance effect, without any wiring layer. A part of the role that wiring layers in conventional elements have taken is performed by a wiring pattern with relatively low resistance which is formed on the permalloy film 2 in a thick and short area. A second conduction film 5 is extended beyond an interlayer insulation film 4 to a region where the insulation film 4 is not provided, and is directly contacted with the glass substrate 1 to form a junction terminal 5a with the outside.
申请公布号 JPS6127690(A) 申请公布日期 1986.02.07
申请号 JP19840147537 申请日期 1984.07.18
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 TAMURA KATSUYOSHI;KONISHI NOBUO
分类号 H01L43/08;(IPC1-7):H01L43/08 主分类号 H01L43/08
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