| 摘要 |
PURPOSE:To give a tunnel transistor a saturation characteristic by providing a second gate between a first gate for conrolling tunnel probability of a tunnel barrier near a source and a drain to prevent the tunnel barrier from suffering influences of a drain voltage. CONSTITUTION:An n<-> well 102 is formed on a semiconductor p-substrate 101, and a p<++> region 103 of a source, a n<++> region 104 of a drain, a p<+> region 109 of a first gate and a p<+> region 111 of a second gate are formed on the inner surface of the well. A source electrode 107, a drain electrode 108, a first gate electrode 110 and a second gate electrode 112 are connected to the regions corresponding thereto through contact holes on an insulating film 105. A circular mark 106 is a region in which a tunnel barrier exists. Furthermore, influences of the voltage in the n<++> retion 104 of the drain are screened by the p<+> region 111 of the second gate by making the interval WG2 between each p<+> region 111 smaller than the distance LGG between the p<+> region 109 of the first gate and the p<+> region 111 of the second gate, that is, LGG>WG2. |
