| 摘要 |
PURPOSE:To suppress the production of hillocks and thereby to improve voltage- withstanding capability by a method wherein a wiring on a semiconductor device is composed of a wiring pattern made of aluminum or its alloy and an alloy layer of greater hardness. CONSTITUTION:On top of a silicon substrate 21, a diffused layer 22 and insulating 23 are formed, and then a contact hole 24 is provided. An Al alloy film 25 containing some Cu or Si and a metal film 26 composed of Ti and Si are formed, to be subjected to patterning. Another metal film composed of Ti and Si is formed to be subjected to etching, whereafter a metal film 27' is retained on the side walls of an Al alloy film pattern 25'. The Al component of the Al alloy film pattern 25', patterned metal film 26', and the Ti and Si components of the metal film 27' are converted into an alloy for the formation of an Al-Ti- Si alloy layer 29 superior to Al in hardness. A second-layer Al wiring 31 is formed on an interlayer insulating film 28 after the formation of a first-layer wiring 30 is formed of the Al alloy film pattern 25' and alloy layer 29. |
