发明名称 ELECTRON BEAM EXPOSURE SYSTEM
摘要 In an electron beam exposure system, a table on which a target was mounted is accelerated in Y direction and then decelerated. During this movement, the speed of the target is detected. An electron beam which is directed to the target is deflected in X direction at a constant deflection rate by X deflection electrodes. The electron beam which passed through the gap between the X deflection electrodes is deflected by Y deflection electrodes at a deflection rate and from a deflection starting point in Y direction during the period of acceleration and deceleration. The electron beam then lands on the target. The deflection rate and the deflection starting point are determined by the moving speed of the table so as to draw on the table a straight line extending in the X direction. Thus, the target is exposed at high speed with high accuracy.
申请公布号 DE3173312(D1) 申请公布日期 1986.02.06
申请号 DE19813173312 申请日期 1981.09.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIKAWA, RYOICHI
分类号 H01L21/027;H01J37/304;H01L21/30;(IPC1-7):H01J37/30 主分类号 H01L21/027
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