| 摘要 |
PURPOSE:To prevent light interference by laminating on a substrate the first layer contg. Si and Ge and the second layer contg. Si and increasing Ge concn. in the first layer on the side of the support and incorporating a conductivity governing substance. CONSTITUTION:The first amorphous layer 1002 contg. Si and Ge and the second amorphous layer 1003 contg. Si are laminated on the substrate 1001 by the plasma vapor phase deposition method or the like. The interfaces 1005, 1006 of each layer are formed not parallel to each other, and each is minutely roughened to prevent the interference of the lights reflected from the interfaces. The Ge concn. in the first layer is increased on the side of the substrate 1001 to enhance efficiency of absorption of light in the longer wavelength side. A conductivity governing substance, such as an n type element of group III or a p type element of group V of the periodic table is incorporated in the first or second layer 1002, 1003 to effectively block injection of electrons or positive holes from the substrate 1001 to the light receiving layer 1000, thus permitting the light receiving member to be adapted to digital image formation. |
