| 摘要 |
PURPOSE:To enable the epitaxial growth with temperature of substrate crystal of 700 deg.C or under by projecting light to gas in the vicinity of the substrate crystal when GaAs single crystal is epitaxially grown by a halogen transportation. CONSTITUTION:A Ga source 3 which is saturated with As and a GaAs substrate 4 are arranged in a crystal tube reactor 2. The source 3 and substrate 4 are heated by a furnace 5 to the predetermined temperature and the light including the wave length contents of 200-300nm are projected to the gas in the vicinity of the surface of substrate 4 from a light source 6 through a window 1. H2 passes through a flowmeter 7 and an AsCl3 bubbler 9 which is kept at the predetermined temperature in a constant temperature bath 8, and H2 is led to the reactor 2. A GaAs single crystal is thus epitaxially grown on the substrate 4. For the source 3, GaAs compound is available and for the gas in the vicinity of the substrate crystal plane, the gas generated by introducing the gas including HCl to the above of Ga source, or the gas including GaCl3 and AsH3 can be used. By this method, the temperature for growing crystals can be reduced and an epitaxial layer of high-purity GaAs single crystal can be obtained easily.
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