| 摘要 |
PURPOSE:To obtain satisfactory bonding strength and suppress the occurrence of a short-circuiting phenomenon through bonding solder, by bonding a semiconductor laser chip to the surface of a projection formed on an Si submount, and making the bonding portion of the sub-mount smaller than the laser chip. CONSTITUTION:An Si wafer is provided with projections by a single etching operation, and Ni dry plating is effected. Further, deposition of Cr, Ni-Cr, Ni and Sn is carried out by evaporation. The wafer is diced to obtain Si sub- mounts 9, 10 having respective projections 11. Each projection 11 is made smaller than a semiconductor laser chip. Thus, the bonding can be ensured without allowing the peripheral portion of the laser chip around which a coating agent passes to contribute to bonding. Employment of a sub-mount in which the front edge of the flat portion of the projection is on the inner side of the front edge of the sub-mount body enables bonding of a semiconductor laser chip in such a manner that the front edge of the laser chip and the front edge of the sub- mount body are aligned with each other, so that the positioning of the laser chip is facilitated and effected accurately. |
