| 摘要 |
PURPOSE:To activate both conductive types of impurities simultaneously and to form a junction in the direction of the depth, by annealing a compound semiconductor device provided with protective film in which both the conductive types of p type and n type of impurities are ion-implanted. CONSTITUTION:n type impurities, for example Si<+> ions, are implanted onto a semi-insulating GaAs substrate 2 through a selective implanting mask 1 made of resist, forming an n type impurity Si<+> implanting layer 3. Next, onto the same region, p type impurities, for example Zn<+> ions are implanted through a selective implanting mask 4 made of resist, forming a p type impurity Zn<+> implanting layer. Thereafter, after an annealing protective film 6, for example a silicon nitride film with a thickness of 700Angstrom , is deposited over the GaAs substrate 2 using a plasma CVD method, the substrate 2 is annealed in a nitrogen atmosphere, for example at a temperature of 830 deg.C for 15min, so that the p type impurities and n type impurities are simultaneously activated to form an n type layer 7 and a p type layer 8 and thus to form a p-n junction in the direction of the depth. |
