| 摘要 |
PURPOSE:To stop certainly a leakage between capacitors adjoining each other and to get a big reduction of an element isolation width by forming an element isolation region at the bottom of a groove formed on the face of a semiconductor substrate and constructing a capacitar from a groove side to a principal plane. CONSTITUTION:A MOSFET Q2 is formed on a principal plane of a semiconductor substrate 11. A capacitor C2 is formed at the right angles to a principal plane of a substrate 11 on a side and a part of a principal plane (both ends of island) of a groove 12 by a substrate 11, the first gate insulating film 14 and the first gate electrode 15. A MOSFET Q2 and a capacitor C2 construct a D- RAM element. As a capacitor C2 is fixed with the first gate electrode back to back with each capacitor C2 of memory elements adjoining, it stops a leakage from occuring and improves a reliability of a memory characteristics. |
